WPB4002

Obsolete

ON Semiconductor

MOSFET N-CH 600V 23A TO3PB

Search across all available documentation for this part.

Obsolete

ON Semiconductor

MOSFET N-CH 600V 23A TO3PB

Technical Specifications

Parameters and characteristics for this part

Specification	WPB4002

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	84 nC
Input Capacitance (Ciss) (Max) @ Vds	2200 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	2.5 W, 220 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	TO-3PB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)
ON Semiconductor WPB4002	10 V	N-Channel	TO-3PB	23 A	SC-65-3 TO-3P-3	150 °C	2200 pF	MOSFET (Metal Oxide)	360 mOhm	30 V	2.5 W 220 W	Through Hole	84 nC	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 23A (Ta) 2.5W (Ta), 220W (Tc) Through Hole TO-3PB

Technical documentation and resources

No documents available