WNB2560MQ

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WeEn Semiconductors Co., Ltd

WNB2560M/GBJ/STANDARD MARKING *

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Active

WeEn Semiconductors Co., Ltd

WNB2560M/GBJ/STANDARD MARKING *

Technical Specifications

Parameters and characteristics for this part

Specification	WNB2560MQ

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	4-SIP, GBJ
Supplier Device Package	GBJS
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	920 mV
Voltage - Peak Reverse (Max) [Max]	600 V

Part	Mounting Type	Supplier Device Package	Package / Case	Current - Average Rectified (Io)	Operating Temperature	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Diode Type	Voltage - Peak Reverse (Max) [Max]	Technology
WeEn Semiconductors Co., Ltd WNB2560MQ	Through Hole	GBJS	4-SIP GBJ	25 A	150 °C	10 µA	920 mV	Single Phase	600 V	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3000	$ 1.54

General part information

Bridge Rectifier Single Phase Standard 600 V Through Hole GBJS

Technical documentation and resources

No documents available