AOB288L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 10.5A/46A TO263

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 10.5A/46A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB288L

Current - Continuous Drain (Id) @ 25°C	10.5 A, 46 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	1871 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	93.5 W, 2.1 W
Rds On (Max) @ Id, Vgs	8.9 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.4 V

Part	Vgs (Max)	Power Dissipation (Max)	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]
Alpha & Omega Semiconductor Inc. AOB288L	20 V	2.1 W 93.5 W	MOSFET (Metal Oxide)	TO-263 (D2PAK)	1871 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	10.5 A 46 A	6 V 10 V	3.4 V	80 V	8.9 mOhm	38 nC	N-Channel	-55 °C	175 ░C

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General part information

N-Channel 80 V 10.5A (Ta), 46A (Tc) 2.1W (Ta), 93.5W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources