DSEI8-06A

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IXYS

DIODE GEN PURP 600V 8A TO220AC

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IXYS

DIODE GEN PURP 600V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	DSEI8-06A

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.5 V, 8 A

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Package / Case	Current - Average Rectified (Io)	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)
IXYS DSEI8-06AS-TRL	150 °C	-40 °C	TO-263AA	20 µA	600 V	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	8 A	Standard	Surface Mount	1.5 V 8 A	50 ns
IXYS DSEI8-06A	150 °C	-40 °C	TO-220AC	20 µA	600 V	200 mA 500 ns	TO-220-2	8 A	Standard	Through Hole	1.5 V 8 A	50 ns
IXYS DSEI8-06AS-TUB	150 °C	-40 °C	TO-263AA	20 µA	600 V	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	8 A	Standard	Surface Mount	1.5 V 8 A	50 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 8A Through Hole TO-220AC

Technical documentation and resources