GPA805HC0G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 8A TO220AC

Search across all available documentation for this part.

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	GPA805HC0G

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Qualification	AEC-Q101
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Supplier Device Package	Qualification	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Capacitance @ Vr, F	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Taiwan Semiconductor Corporation GPA805HC0G	TO-220AC	AEC-Q101	Standard Recovery >500ns	200 mA	1.1 V	Automotive	600 V	Through Hole	TO-220-2	50 pF	Standard	8 A	5 µA	150 °C	-55 °C
Taiwan Semiconductor Corporation GPA805 C0G	TO-220AC		Standard Recovery >500ns	200 mA	1.1 V		600 V	Through Hole	TO-220-2	50 pF	Standard	8 A	5 µA	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 8A Through Hole TO-220AC

Technical documentation and resources