SFP9Z24

Obsolete

ON Semiconductor

MOSFET P-CH 60V 9.7A TO220-3

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Obsolete

ON Semiconductor

MOSFET P-CH 60V 9.7A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SFP9Z24

Current - Continuous Drain (Id) @ 25°C	9.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	49 W
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)
ON Semiconductor SFP9Z24	P-Channel	280 mOhm	-55 °C	175 ░C	19 nC	9.7 A	60 V	TO-220-3	49 W	600 pF	Through Hole	MOSFET (Metal Oxide)	4 V	10 V	TO-220-3	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 9.7A (Tc) 49W (Tc) Through Hole TO-220-3

Technical documentation and resources