RS3L140GNGZETB

NRND

Rohm Semiconductor

NCH 60V 14A POWER MOSFET: RS3L14

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NRND

Rohm Semiconductor

NCH 60V 14A POWER MOSFET: RS3L14

Technical Specifications

Parameters and characteristics for this part

Specification	RS3L140GNGZETB

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2980 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.4 W
Rds On (Max) @ Id, Vgs [Max]	6.5 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Pch -60V -11A Power MOSFET

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	FET Type	Supplier Device Package	Technology	Mounting Type	Vgs (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]
Rohm Semiconductor RS3L140GNGZETB	60 V	6.5 mOhm	N-Channel	8-SOP	MOSFET (Metal Oxide)	Surface Mount	20 V	8-SOIC	3.9 mm	0.154 in	2.7 V	1.4 W	2980 pF	58 nC	4.5 V 10 V	150 °C	14 A
Rohm Semiconductor RS3L110ATTB1	60 V		P-Channel	8-SOP	MOSFET (Metal Oxide)	Surface Mount	20 V	8-SOIC	3.9 mm	0.154 in		1.4 W			4.5 V 10 V	150 °C	11 A	6300 pF	115 nC	12.8 mOhm	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

RS3L110AT is a low on-resistance MOSFET suitable for switching and load switches.

Technical documentation and resources