TN4033A

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ON Semiconductor

TRANS PNP 80V 1A TO226-3

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ON Semiconductor

TRANS PNP 80V 1A TO226-3

Technical Specifications

Parameters and characteristics for this part

Specification	TN4033A

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	1 W
Supplier Device Package	TO-226-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Current - Collector (Ic) (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor TN4033A	1 A	Through Hole	-55 °C	150 °C	80 V	PNP	1 W	100 hFE	TO-226-3 TO-92-3	50 nA	TO-226-3	500 mV
ON Semiconductor TN4033A	1 A	Through Hole	-55 °C	150 °C	80 V	PNP	1 W	100 hFE	TO-226-3 TO-92-3	50 nA	TO-226-3	500 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 80 V 1 A 1 W Through Hole TO-226-3

Technical documentation and resources