MBR300150CTR

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GeneSiC Semiconductor

150V 1 PAIR COMMON ANODE 880MV@150A SCHOTTKY DIODES ROHS

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GeneSiC Semiconductor

150V 1 PAIR COMMON ANODE 880MV@150A SCHOTTKY DIODES ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	MBR300150CTR

Current - Average Rectified (Io) (per Diode)	150 A
Current - Reverse Leakage @ Vr	3 mA
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Twin Tower
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - Forward (Vf) (Max) @ If [Max]	880 mV

Part	Current - Average Rectified (Io) (per Diode)	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Diode Configuration	Package / Case	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology
GeneSiC Semiconductor MBR300150CTR	150 A	Twin Tower	Chassis Mount	880 mV	1 Pair Common Anode	Twin Tower	200 mA 500 ns	3 mA	150 °C	-40 °C	Schottky
GeneSiC Semiconductor MBR300150CT	150 A	Twin Tower	Chassis Mount	880 mV	1 Pair Common Cathode	Twin Tower	200 mA 500 ns	3 mA	150 °C	-40 °C	Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Anode 150 V 150A Chassis Mount Twin Tower

Technical documentation and resources