SJPX-H6VL

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Sanken Electric USA Inc.

DIODE GEN PURP 600V 2A SJP

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Sanken Electric USA Inc.

DIODE GEN PURP 600V 2A SJP

Technical Specifications

Parameters and characteristics for this part

Specification	SJPX-H6VL

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	2-SMD, J-Lead
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	SJP
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.5 V

Part	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Technology	Supplier Device Package	Reverse Recovery Time (trr)	Speed	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type
Sanken Electric USA Inc. SJPX-H6VL	10 µA	150 °C	-40 °C	2-SMD J-Lead	Standard	SJP	30 ns	200 mA 500 ns	1.5 V	2 A	600 V	Surface Mount
Sanken Electric USA Inc. SJPX-H6V	10 µA	150 °C	-40 °C	2-SMD J-Lead	Standard	SJP	30 ns	200 mA 500 ns	1.5 V	2 A	600 V	Surface Mount
Sanken Electric USA Inc. SJPX-H6VR	10 µA	150 °C	-40 °C	2-SMD J-Lead	Standard	SJP	30 ns	200 mA 500 ns	1.5 V	2 A	600 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 2A Surface Mount SJP

Technical documentation and resources