AOD3N60

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2.5A TO252

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2.5A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	AOD3N60

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	370 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	56.8 W
Rds On (Max) @ Id, Vgs	3.5 Ohm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)
Alpha & Omega Semiconductor Inc. AOD3N80	10 V	N-Channel	150 °C	-50 °C	4.8 Ohm	30 V	2.8 A	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	10 nC	510 pF	83 W	4.5 V	TO-252 (DPAK)	800 V
Alpha & Omega Semiconductor Inc. AOD3N60	10 V	N-Channel	150 °C	-50 °C	3.5 Ohm	30 V	2.5 A	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	12 nC	370 pF	56.8 W	4.5 V	TO-252 (DPAK)	600 V

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