SGL50N60RUFTU

Obsolete

ON Semiconductor

IGBT 600V 80A 250W TO264

Search across all available documentation for this part.

Obsolete

ON Semiconductor

IGBT 600V 80A 250W TO264

Technical Specifications

Parameters and characteristics for this part

Specification	SGL50N60RUFTU

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	150 A
Gate Charge	145 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	250 W
Supplier Device Package	TO-264-3
Switching Energy	1.03 mJ, 1.68 mJ
Td (on/off) @ 25°C	66 ns, 26 ns
Test Condition	15 V, 300 V, 50 A, 5.9 Ohm
Vce(on) (Max) @ Vge, Ic	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Td (on/off) @ 25°C	Mounting Type	Gate Charge	Power - Max [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Test Condition	Switching Energy
ON Semiconductor SGL50N60RUFTU	26 ns 66 ns	Through Hole	145 nC	250 W	TO-264-3 TO-264AA	-55 °C	150 °C	600 V	150 A	80 A	TO-264-3	2.8 V	5.9 Ohm 15 V 50 A 300 V	1.03 mJ 1.68 mJ

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT 600 V 80 A 250 W Through Hole TO-264-3

Technical documentation and resources