MBR120100CT

Active

GeneSiC Semiconductor

DIODE MOD SCHOT 100V 120A 2TOWER

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

DIODE MOD SCHOT 100V 120A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR120100CT

Current - Average Rectified (Io) (per Diode)	120 A
Current - Reverse Leakage @ Vr	3 mA
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Package / Case	Twin Tower
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V

Part	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package	Mounting Type	Package / Case	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Speed
GeneSiC Semiconductor MBR120100CT	3 mA	Schottky	Twin Tower	Chassis Mount	Twin Tower	120 A	100 V	1 Pair Common Anode	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	80	$ 57.41

General part information

Diode Array 1 Pair Common Anode 100 V 120A (DC) Chassis Mount Twin Tower

Technical documentation and resources