2SA1941-O(Q)

Active

Toshiba Semiconductor and Storage

TRANS PNP 140V 10A TO-3PN

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

TRANS PNP 140V 10A TO-3PN

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1941-O(Q)

Current - Collector Cutoff (Max) [Max]	5 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	80
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	100 W
Supplier Device Package	TO-3P(N)
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	140 V

Part	Package / Case	Frequency - Transition	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Supplier Device Package	Mounting Type	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]
Toshiba Semiconductor and Storage 2SA1941-O(Q)	SC-65-3 TO-3P-3	30 MHz	PNP	2 V	100 W	TO-3P(N)	Through Hole	150 °C	80	140 V	5 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	50	$ 1.74

General part information

Bipolar (BJT) Transistor PNP 140 V 10 A 30MHz 100 W Through Hole TO-3P(N)

Technical documentation and resources