VIT2080S-M3/4W

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Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 80V 20A TO262AA

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Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 80V 20A TO262AA

Technical Specifications

Parameters and characteristics for this part

Specification	VIT2080S-M3/4W

Current - Reverse Leakage @ Vr	700 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Speed	200 mA, 500 ns
Supplier Device Package	TO-262AA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If	920 mV

Part	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Speed	Technology	Current - Average Rectified (Io) (per Diode)	Diode Configuration
Vishay General Semiconductor - Diodes Division VIT2080S-M3/4W	920 mV	700 µA	150 °C	-55 °C	Through Hole	80 V	I2PAK TO-262-3 Long Leads TO-262AA	TO-262AA	200 mA 500 ns	Schottky
Vishay General Semiconductor - Diodes Division VIT2080C-E3/4W	810 mV	600 µA	150 °C	-55 °C	Through Hole	80 V	I2PAK TO-262-3 Long Leads TO-262AA	TO-262AA	200 mA 500 ns	Schottky	10 A	1 Pair Common Cathode

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	8000	$ 0.46

General part information

Diode 80 V 20A Through Hole TO-262AA

Technical documentation and resources