AOD1N60M

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET

Search across all available documentation for this part.

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	AOD1N60M

Current - Continuous Drain (Id) @ 25°C	1.3 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Input Capacitance (Ciss) (Max) @ Vds	160 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs [Max]	9 Ohm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	FET Type	Supplier Device Package	Technology	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Power Dissipation (Max)
Alpha & Omega Semiconductor Inc. AOD1N60M	600 V	10 V	1.3 A	8 nC	N-Channel	TO-252 (DPAK)	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V	150 °C	-50 °C	30 V	160 pF	9 Ohm	Surface Mount	45 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 1.3A (Tc) 45W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources

No documents available