TK8A60W,S4VX

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 8A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 8A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK8A60W,S4VX

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	570 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

Part	Operating Temperature	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [x]	Power Dissipation (Max)
Toshiba Semiconductor and Storage TK8A60W,S4VX	150 °C	N-Channel	570 pF	TO-220SIS	MOSFET (Metal Oxide)	18.5 nC	30 V	10 V	Through Hole	8 A	TO-220-3 Full Pack	3.7 V	500 mOhm	600 V
Toshiba Semiconductor and Storage TK8A60DA(STA4,Q,M)	150 °C	N-Channel		TO-220SIS	MOSFET (Metal Oxide)		30 V	10 V	Through Hole	7.5 A	TO-220-3 Full Pack		1 Ohm	600 V	1050 pF	20 nC	45 W
Toshiba Semiconductor and Storage TK8A60W5,S5VX	150 °C	N-Channel		TO-220SIS	MOSFET (Metal Oxide)	22 nC	30 V	10 V	Through Hole	8 A	TO-220-3 Full Pack	4.5 V	540 mOhm	600 V	590 pF

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General part information

N-Channel 600 V 8A (Ta) 30W (Tc) Through Hole TO-220SIS

Technical documentation and resources