2SK2095N

Obsolete

Rohm Semiconductor

MOSFET N-CH 60V 10A TO220FN

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Obsolete

Rohm Semiconductor

MOSFET N-CH 60V 10A TO220FN

Technical Specifications

Parameters and characteristics for this part

Specification	2SK2095N

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	95 mOhm
Supplier Device Package	TO-220FN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds
Rohm Semiconductor 2SK2095N	2.5 V	20 V	MOSFET (Metal Oxide)	10 A	Through Hole	95 mOhm	TO-220FN	60 V	TO-220-3 Full Pack	4 V	10 V	N-Channel	150 °C	1600 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 10A (Ta) 30W (Tc) Through Hole TO-220FN

Technical documentation and resources