C5D50065D
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DIODE SIL CARB 650V 100A TO247-3
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C5D50065D
ObsoleteWolfspeed
DIODE SIL CARB 650V 100A TO247-3
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | C5D50065D |
|---|---|
| Capacitance @ Vr, F | 1970 pF |
| Current - Average Rectified (Io) | 100 A |
| Current - Reverse Leakage @ Vr | 500 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-247-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-247-3 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
C5D50065 Series
Diode 650 V 100A Through Hole TO-247-3
Documents
Technical documentation and resources
No documents available