CUHS15S30,H3F

Active

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A US2H

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A US2H

Technical Specifications

Parameters and characteristics for this part

Specification	CUHS15S30,H3F

Capacitance @ Vr, F	200 pF
Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 ¯C
Package / Case	2-SMD, Flat Leads
Speed	200 mA, 500 ns
Supplier Device Package	US2H
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	430 mV

Part	Operating Temperature - Junction	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Speed	Capacitance @ Vr, F	Technology	Current - Average Rectified (Io)	Package / Case	Voltage - Forward (Vf) (Max) @ If
Toshiba Semiconductor and Storage CUHS15S40,H3F	150 °C	US2H	40 V	Surface Mount	200 µA	200 mA 500 ns	170 pF	Schottky	1.5 A	2-SMD Flat Leads
Toshiba Semiconductor and Storage CUHS15S30,H3F	150 ¯C	US2H	30 V	Surface Mount	500 µA	200 mA 500 ns	200 pF	Schottky	1.5 A	2-SMD Flat Leads	430 mV
Toshiba Semiconductor and Storage CUHS15F30,H3F	150 ¯C	US2H	30 V	Surface Mount	50 çA	200 mA 500 ns	170 pF	Schottky	1.5 A	2-SMD Flat Leads	520 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 30 V 1.5A Surface Mount US2H

Technical documentation and resources