AOB286L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 13A/70A TO263

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 13A/70A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB286L

Current - Continuous Drain (Id) @ 25°C	13 A, 70 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds	3142 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	2.1 W, 167 W
Rds On (Max) @ Id, Vgs	5.7 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.3 V

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case
Alpha & Omega Semiconductor Inc. AOB286L	TO-263 (D2PAK)	6 V 10 V	63 nC	20 V	80 V	5.7 mOhm	-55 °C	175 ░C	Surface Mount	MOSFET (Metal Oxide)	3142 pF	N-Channel	2.1 W 167 W	3.3 V	13 A 70 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

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General part information

N-Channel 80 V 13A (Ta), 70A (Tc) 2.1W (Ta), 167W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources