SK110E3/TR13

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Microsemi Corporation

DIODE SCHOTTKY 100V 1A DO214BA

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Microsemi Corporation

DIODE SCHOTTKY 100V 1A DO214BA

Technical Specifications

Parameters and characteristics for this part

Specification	SK110E3/TR13

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-214BA
Speed	200 mA, 500 ns
Supplier Device Package	DO-214BA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	800 mV

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case	Technology
Microsemi Corporation SK110E3/TR13	1 A	800 mV	DO-214BA	100 V	200 mA 500 ns	175 ░C	-65 C	Surface Mount	500 µA	DO-214BA	Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 100 V 1A Surface Mount DO-214BA

Technical documentation and resources