MBRH120150R

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GeneSiC Semiconductor

DIODE SCHOTTKY 150V 120A D-67

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GeneSiC Semiconductor

DIODE SCHOTTKY 150V 120A D-67

Technical Specifications

Parameters and characteristics for this part

Specification	MBRH120150R

Current - Average Rectified (Io)	120 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D-67
Speed	200 mA, 500 ns
Supplier Device Package	D-67
Technology	Schottky
Voltage - Forward (Vf) (Max) @ If	880 mV

Part	Package / Case	Speed	Technology	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor MBRH120150R	D-67	200 mA 500 ns	Schottky	1 mA	120 A	150 °C	-55 °C	Chassis Mount	D-67	880 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	108	$ 50.06

General part information

Diode 150 V 120A Chassis Mount D-67

Technical documentation and resources