MUR2X100A02

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GeneSiC Semiconductor

DIODE MODULE GP 200V 100A SOT227

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GeneSiC Semiconductor

DIODE MODULE GP 200V 100A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	MUR2X100A02

Current - Average Rectified (Io) (per Diode)	100 A
Current - Reverse Leakage @ Vr	25 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOT-227
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Speed	Speed	Supplier Device Package	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Diode Configuration	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)
GeneSiC Semiconductor MUR2X100A12	Standard Recovery >500ns	200 mA	SOT-227	Chassis Mount	1.2 kV	SOT-227-4 miniBLOC	2 Independent	Standard	175 ░C	-55 C	100 A
GeneSiC Semiconductor MUR2X100A02		200 mA 500 ns	SOT-227	Chassis Mount	200 V	SOT-227-4 miniBLOC	2 Independent	Standard	175 ░C	-55 C	100 A	1 V	25 µA	75 ns
GeneSiC Semiconductor MUR2X100A10	Standard Recovery >500ns	200 mA	SOT-227	Chassis Mount	1000 V	SOT-227-4 miniBLOC	2 Independent	Standard	175 ░C	-55 C	100 A		25 µA
GeneSiC Semiconductor MUR2X100A06	Standard Recovery >500ns	200 mA	SOT-227	Chassis Mount	600 V	SOT-227-4 miniBLOC	2 Independent	Standard	175 ░C	-55 C	100 A	1.5 V	25 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 2 Independent 200 V 100A Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources