XP233N05013R-G

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Torex Semiconductor Ltd

MOSFET N-CH 30V 500MA SOT323-3

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Torex Semiconductor Ltd

MOSFET N-CH 30V 500MA SOT323-3

Technical Specifications

Parameters and characteristics for this part

Specification	XP233N05013R-G

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.78 nC
Input Capacitance (Ciss) (Max) @ Vds	40 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	SOT-323-3A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.7 V

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Power Dissipation (Max) [Max]	Operating Temperature	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Vgs(th) (Max) @ Id
Torex Semiconductor Ltd XP233N05013R-G	20 V	2.5 V 4.5 V	40 pF	SOT-323-3A	Surface Mount	350 mW	150 °C	1.5 Ohm	500 mA	SC-70 SOT-323	30 V	0.78 nC	N-Channel	MOSFET (Metal Oxide)	1.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 500mA (Ta) 350mW (Ta) Surface Mount SOT-323-3A

Technical documentation and resources