71V35761S183PFG

Obsolete

Renesas Electronics Corporation

3.3V 128K X 36 SYNCHRONOUS PIPELINED BURST SRAM W/3.3V I/O

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71V35761S183PFG

Obsolete

Renesas Electronics Corporation

3.3V 128K X 36 SYNCHRONOUS PIPELINED BURST SRAM W/3.3V I/O

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	71V35761S183PFG

Access Time	3.3 ns
Clock Frequency	183 MHz
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	128K x 36
Memory Size	4.5 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	100-LQFP
Supplier Device Package	100-TQFP (14x14)
Technology	SRAM - Synchronous, SDR
Voltage - Supply [Max]	3.465 V
Voltage - Supply [Min]	3.135 V

71V35761S Series

3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O

Part	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Access Time	Clock Frequency	Memory Interface	Memory Size	Memory Organization	Mounting Type	Memory Type	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Memory Format
Renesas Electronics Corporation 71V35761SA200BG8	70 °C	0 °C	SRAM - Synchronous SDR	3.1 ns	200 MHz	Parallel	4.5 Mbit	128K x 36	Surface Mount	Volatile	119-PBGA (14x22)	3.465 V	3.135 V	119-BGA	SRAM
Renesas Electronics Corporation 71V35761SA200BGI	85 °C	-40 °C	SRAM - Synchronous SDR	3.1 ns	200 MHz	Parallel	4.5 Mbit	128K x 36	Surface Mount	Volatile	119-PBGA (14x22)	3.465 V	3.135 V	119-BGA	SRAM
Renesas Electronics Corporation 71V35761SA200BGG	70 °C	0 °C	SRAM - Synchronous SDR	3.1 ns	200 MHz	Parallel	4.5 Mbit	128K x 36	Surface Mount	Volatile	119-PBGA (14x22)	3.465 V	3.135 V	119-BGA	SRAM
Renesas Electronics Corporation 71V35761SA183BGI	85 °C	-40 °C	SRAM - Synchronous SDR	3.3 ns	183 MHz	Parallel	4.5 Mbit	128K x 36	Surface Mount	Volatile	119-PBGA (14x22)	3.465 V	3.135 V	119-BGA	SRAM
Renesas Electronics Corporation 71V35761SA166BGG8	70 °C	0 °C	SRAM - Synchronous SDR		166 MHz	Parallel	4.5 Mbit	128K x 36	Surface Mount	Volatile	119-PBGA (14x22)	3.465 V	3.135 V	119-BGA	SRAM
Renesas Electronics Corporation 71V35761S166PFGI8	85 °C	-40 °C	SRAM - Synchronous SDR		166 MHz	Parallel	4.5 Mbit	128K x 36	Surface Mount	Volatile	100-TQFP (14x14)	3.465 V	3.135 V	100-LQFP	SRAM
Renesas Electronics Corporation 71V35761S200PFG8	70 °C	0 °C	SRAM - Synchronous SDR	3.1 ns	200 MHz	Parallel	4.5 Mbit	128K x 36	Surface Mount	Volatile	100-TQFP (14x14)	3.465 V	3.135 V	100-LQFP	SRAM
Renesas Electronics Corporation 71V35761S183PFG	70 °C	0 °C	SRAM - Synchronous SDR	3.3 ns	183 MHz	Parallel	4.5 Mbit	128K x 36	Surface Mount	Volatile	100-TQFP (14x14)	3.465 V	3.135 V	100-LQFP	SRAM
Renesas Electronics Corporation 71V35761SA166BG	70 °C	0 °C	SRAM - Synchronous SDR		166 MHz	Parallel	4.5 Mbit	128K x 36	Surface Mount	Volatile	119-PBGA (14x22)	3.465 V	3.135 V	119-BGA	SRAM
Renesas Electronics Corporation 71V35761S183PFGI8	85 °C	-40 °C	SRAM - Synchronous SDR	3.3 ns	183 MHz	Parallel	4.5 Mbit	128K x 36	Surface Mount	Volatile	100-TQFP (14x14)	3.465 V	3.135 V	100-LQFP	SRAM

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

71V35761S Series

The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.

Documents

Technical documentation and resources

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Datasheet

71V35761 Datasheet

Datasheet