SURS360DT3G

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ON Semiconductor

DIODE GEN PURP 600V 3A SMC

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Unknown

ON Semiconductor

DIODE GEN PURP 600V 3A SMC

Technical Specifications

Parameters and characteristics for this part

Specification	SURS360DT3G

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SMC, DO-214AB
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	SMC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Mounting Type	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed
ON Semiconductor SURS360DT3G	3 A	10 µA	SMC	DO-214AB SMC	1.25 V	600 V	75 ns	Surface Mount	Standard	175 ░C	-65 C	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 3A Surface Mount SMC

Technical documentation and resources