2SD1407A-Y(F)

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 100V 5A TO-220NIS

Search across all available documentation for this part.

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 100V 5A TO-220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1407A-Y(F)

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	100 µA
Frequency - Transition	12 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	30 W
Supplier Device Package	TO-220NIS
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Current - Collector (Ic) (Max)	Transistor Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Package / Case
Toshiba Semiconductor and Storage 2SD1407A-Y(F)	150 °C	2 V	Through Hole	5 A	NPN	100 µA	30 W	TO-220NIS	100 V	12 MHz	TO-220-3 Full Pack

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 100 V 5 A 12MHz 30 W Through Hole TO-220NIS

Technical documentation and resources