PJX8828_R1_00001

Active

Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

Search across all available documentation for this part.

Active

Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJX8828_R1_00001

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	0.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	45 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	300 mW
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	SOT-563
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Package / Case	Technology	Vgs(th) (Max) @ Id	Configuration	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Mounting Type
Panjit International Inc. PJX8828_R1_00001	45 pF	SOT-563	SOT-563 SOT-666	MOSFET (Metal Oxide)	1 V	2 N-Channel (Dual)	30 V	-55 °C	150 °C	300 mW	300 mA	0.9 nC	1.2 Ohm	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 300mA (Ta) 300mW (Ta) Surface Mount SOT-563

Technical documentation and resources