PJL9830A_R2_00001

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Panjit International Inc.

MOSFET 2N-CH 60V 4.8A 8SOP

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Panjit International Inc.

MOSFET 2N-CH 60V 4.8A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	PJL9830A_R2_00001

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.8 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	815 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.5 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Technology	Supplier Device Package	Configuration
Panjit International Inc. PJL9830A_R2_00001	60 V	50 mOhm	4.8 A	-55 °C	150 °C	Surface Mount	8-SOIC	3.9 mm	0.154 in	2.5 V	815 pF	14 nC	2.5 W	MOSFET (Metal Oxide)	8-SOP	2 N-Channel (Dual)

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General part information

Mosfet Array 60V 4.8A (Ta) 2.5W (Ta) Surface Mount 8-SOP

Technical documentation and resources

No documents available