HERAF1003G C0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 10A ITO220AC

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 10A ITO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	HERAF1003G C0G

Capacitance @ Vr, F	80 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Current - Average Rectified (Io)	Capacitance @ Vr, F	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Speed	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Technology
Taiwan Semiconductor Corporation HERAF1003G C0G	10 A	80 pF	Through Hole	150 °C	-55 °C	TO-220-2 Full Pack	ITO-220AC	50 ns	200 mA 500 ns	10 µA	1 V	200 V	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 200 V 10A Through Hole ITO-220AC

Technical documentation and resources

No documents available