TJ200F04M3L,LXHQ

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Toshiba Semiconductor and Storage

MOSFET P-CH 40V 200A TO220SM

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Toshiba Semiconductor and Storage

MOSFET P-CH 40V 200A TO220SM

Technical Specifications

Parameters and characteristics for this part

Specification	TJ200F04M3L,LXHQ

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	460 nC
Input Capacitance (Ciss) (Max) @ Vds	1280 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	TO-220SM(W)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	3 V

Part	Technology	Vgs(th) (Max) @ Id	Operating Temperature	Power Dissipation (Max) [Max]	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max) [Min]	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage TJ200F04M3L,LXHQ	MOSFET (Metal Oxide)	3 V	175 °C	375 W	TO-220SM(W)	P-Channel	40 V	-20 V	10 V	200 A	460 nC	1280 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	6 V 10 V	Surface Mount	1.8 mOhm

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General part information

P-Channel 40 V 200A (Ta) 375W (Tc) Surface Mount TO-220SM(W)

Technical documentation and resources

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