VF20120S-E3/45

Obsolete

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 120V 20A ITO220AB

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Obsolete

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 120V 20A ITO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	VF20120S-E3/45

Current - Reverse Leakage @ Vr	300 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AB
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	120 V
Voltage - Forward (Vf) (Max) @ If	1.12 V

Part	Current - Reverse Leakage @ Vr	Mounting Type	Technology	Package / Case	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Diode Configuration
Vishay General Semiconductor - Diodes Division VF20120C-E3/4W	700 µA	Through Hole	Schottky	TO-220-3 Full Pack Isolated Tab	ITO-220AB	10 A	200 mA 500 ns	900 mV	120 V	150 °C	-40 °C	1 Pair Common Cathode
Vishay General Semiconductor - Diodes Division VF20120S-E3/45	300 µA	Through Hole	Schottky	TO-220-3 Full Pack Isolated Tab	ITO-220AB		200 mA 500 ns	1.12 V	120 V	150 °C	-40 °C
Vishay General Semiconductor - Diodes Division VF20120SG-E3/4W	250 µA	Through Hole	Schottky	TO-220-3 Full Pack Isolated Tab	ITO-220AB		200 mA 500 ns		120 V	150 °C	-40 °C
Vishay General Semiconductor - Diodes Division VF20120SG-M3/4W	250 µA	Through Hole	Schottky	TO-220-3 Full Pack Isolated Tab	ITO-220AB		200 mA 500 ns		120 V	150 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 120 V 20A Through Hole ITO-220AB

Technical documentation and resources