CDM22012-800LRFP SL

Obsolete

Central Semiconductor Corp

MOSFET N-CH 800V 12A TO220FP

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Obsolete

Central Semiconductor Corp

MOSFET N-CH 800V 12A TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	CDM22012-800LRFP SL

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	52.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1090 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	30 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]
Central Semiconductor Corp CDM22012-800LRFP SL	-55 °C	150 °C	TO-220FP	MOSFET (Metal Oxide)	TO-220-3 Full Pack	800 V	1090 pF	10 V	52.4 nC	40 W	Through Hole	4 V	450 mOhm	N-Channel	12 A	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 12A (Ta) 40W (Tc) Through Hole TO-220FP

Technical documentation and resources

No documents available