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ES1FLHRVG - MFG_DO-219AB

ES1FLHRVG

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Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 1A SUB SMA

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ES1FLHRVG - MFG_DO-219AB

ES1FLHRVG

Active
Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 1A SUB SMA

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationES1FLHRVG
Capacitance @ Vr, F8 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr5 µA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseDO-219AB
QualificationAEC-Q101
Reverse Recovery Time (trr)35 ns
Speed200 mA, 500 ns
Supplier Device PackageSub SMA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]300 V
Voltage - Forward (Vf) (Max) @ If1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 12000$ 0.22
30000$ 0.21

Description

General part information

ES1F Series

Diode 300 V 1A Surface Mount Sub SMA

Documents

Technical documentation and resources