AON2405

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Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 8A 6DFN

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Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 8A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AON2405

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Input Capacitance (Ciss) (Max) @ Vds	1025 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	2.8 W
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	6-DFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Alpha & Omega Semiconductor Inc. AON2405	2.8 W	MOSFET (Metal Oxide)	8 A	Surface Mount	18 nC	32 mOhm	1025 pF	6-UDFN Exposed Pad	1.5 V 4.5 V	20 V	900 mV	P-Channel	-55 °C	150 °C	6-DFN (2x2)	8 V
Alpha & Omega Semiconductor Inc. AON2400	2.8 W	MOSFET (Metal Oxide)	8 A	Surface Mount		11 mOhm	1645 pF	6-UDFN Exposed Pad	1.2 V 2.5 V	8 V	750 mV	N-Channel	-55 °C	150 °C	6-DFN (2x2)	5 V	16 nC
Alpha & Omega Semiconductor Inc. AON2406	2.8 W	MOSFET (Metal Oxide)	8 A	Surface Mount	18 nC	12.5 mOhm	1140 pF	6-UDFN Exposed Pad	1.5 V 4.5 V	20 V	1 V	N-Channel	-55 °C	150 °C	6-DFN (2x2)	8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly