PJQ4466AP_R2_00001

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Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

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Active

Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ4466AP_R2_00001

Current - Continuous Drain (Id) @ 25°C	33 A, 6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	1680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2 W, 44.6 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	DFN3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Panjit International Inc. PJQ4466AP_R2_00001	6 A 33 A	4.5 V 10 V	20 V	-55 °C	150 °C	Surface Mount	60 V	2 W 44.6 W	N-Channel	28 nC	21 mOhm	8-PowerVDFN	MOSFET (Metal Oxide)	2.5 V	1680 pF	DFN3333-8

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General part information

N-Channel 60 V 6A (Ta), 33A (Tc) 2W (Ta), 44.6W (Tc) Surface Mount DFN3333-8

Technical documentation and resources