IXFN180N07

Obsolete

IXYS

MOSFET N-CH 70V 180A SOT-227B

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Obsolete

IXYS

MOSFET N-CH 70V 180A SOT-227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN180N07

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	70 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	480 nC
Input Capacitance (Ciss) (Max) @ Vds	9000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	520 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)
IXYS IXFN180N07	520 W	Chassis Mount	9000 pF	4 V	70 V	SOT-227-4 miniBLOC	N-Channel	-55 °C	150 °C	10 V	20 V	SOT-227B	480 nC	180 A	MOSFET (Metal Oxide)	7 mOhm
IXYS IXFN180N10		Chassis Mount	9100 pF	4 V	100 V	SOT-227-4 miniBLOC	N-Channel	-55 °C	150 °C	10 V	20 V	SOT-227B	360 nC	180 A	MOSFET (Metal Oxide)		8 mOhm	600 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 70 V 180A (Tc) 520W (Tc) Chassis Mount SOT-227B

Technical documentation and resources