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1SS307(TE85L,F) - SOT-23-3

1SS307(TE85L,F)

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Toshiba Semiconductor and Storage

DIODE GEN PURP 30V 100MA S-MINI

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1SS307(TE85L,F) - SOT-23-3

1SS307(TE85L,F)

Active
Toshiba Semiconductor and Storage

DIODE GEN PURP 30V 100MA S-MINI

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification1SS307(TE85L,F)
Capacitance @ Vr, F6 pF
Current - Average Rectified (Io)100 mA
Current - Reverse Leakage @ Vr10 nA
Mounting TypeSurface Mount
Operating Temperature - Junction125 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
SpeedAny Speed
Speed200 mA
Supplier Device PackageS-Mini
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]30 V
Voltage - Forward (Vf) (Max) @ If [Max]1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.50
10$ 0.30
100$ 0.19
500$ 0.15
1000$ 0.13
Digi-Reel® 1$ 0.50
10$ 0.30
100$ 0.19
500$ 0.15
1000$ 0.13
Tape & Reel (TR) 3000$ 0.11
6000$ 0.10
9000$ 0.09
15000$ 0.09
21000$ 0.09
30000$ 0.08
75000$ 0.08

Description

General part information

1SS307 Series

Diode 30 V 100mA Surface Mount S-Mini

Documents

Technical documentation and resources