AOD4185

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Alpha & Omega Semiconductor Inc.

MOSFET P-CH 40V 40A TO252

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Alpha & Omega Semiconductor Inc.

MOSFET P-CH 40V 40A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	AOD4185

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	2550 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs
Alpha & Omega Semiconductor Inc. AOD4185	40 V	55 nC	4.5 V 10 V	-55 °C	175 ░C	20 V	MOSFET (Metal Oxide)	3 V	2550 pF	Surface Mount	P-Channel	TO-252 (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	15 mOhm

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