TTD1409B,S4X

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Toshiba Semiconductor and Storage

TRANS NPN DARL 400V 20UA TO220

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Toshiba Semiconductor and Storage

TRANS NPN DARL 400V 20UA TO220

Technical Specifications

Parameters and characteristics for this part

Specification	TTD1409B,S4X

Current - Collector Cutoff (Max) [Max]	20 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	600
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220SIS
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]
Toshiba Semiconductor and Storage TTD1409B,S4X	150 °C	400 V	TO-220SIS	600	Through Hole	2 V	TO-220-3 Full Pack	20 µA	2 W

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General part information

Bipolar (BJT) Transistor NPN - Darlington 400 V 6 A 2 W Through Hole TO-220SIS

Technical documentation and resources