MPS751 TIN/LEAD

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Central Semiconductor Corp

TRANS PNP 60V 2A TO92-3

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Central Semiconductor Corp

TRANS PNP 60V 2A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	MPS751 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	75
Frequency - Transition	75 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Package / Case	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Transistor Type	Power - Max [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)
Central Semiconductor Corp MPS751 TIN/LEAD	150 °C	-65 °C	500 mV	100 nA	75 MHz	TO-226-3 TO-92-3	TO-92-3	2 A	PNP	625 mW	Through Hole	75	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	5000	$ 0.15

General part information

Bipolar (BJT) Transistor PNP 60 V 2 A 75MHz 625 mW Through Hole TO-92-3

Technical documentation and resources