1N5817H

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 1A DO204AL

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Active

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 1A DO204AL

Technical Specifications

Parameters and characteristics for this part

Specification	1N5817H

Capacitance @ Vr, F	55 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 mA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AL, DO-41, Axial
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	DO-204AL (DO-41)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	450 mV

Part	Current - Average Rectified (Io)	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Capacitance @ Vr, F	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Speed
Taiwan Semiconductor Corporation 1N5817H	1 A	Axial DO-204AL DO-41	-55 °C	125 °C	Automotive	20 V	AEC-Q101	55 pF	Through Hole	450 mV	DO-204AL (DO-41)	1 mA	Schottky	200 mA 500 ns
Taiwan Semiconductor Corporation 1N5817	1 A	Axial DO-204AL DO-41	-55 °C	125 °C		20 V		55 pF	Through Hole	450 mV	DO-204AL (DO-41)	1 mA	Schottky	200 mA 500 ns

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General part information

Diode 20 V 1A Through Hole DO-204AL (DO-41)

Technical documentation and resources

No documents available