WNSCM160120WQ

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WeEn Semiconductors Co., Ltd

WNSCM160120W/TO-247/STANDARD MAR

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WeEn Semiconductors Co., Ltd

WNSCM160120W/TO-247/STANDARD MAR

Technical Specifications

Parameters and characteristics for this part

Specification	WNSCM160120WQ

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	35 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	155 W
Rds On (Max) @ Id, Vgs	196 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4.5 V

Part	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Technology	Supplier Device Package	Power Dissipation (Max)	Vgs (Max) [Min]	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
WeEn Semiconductors Co., Ltd WNSCM160120WQ	TO-247-3	1200 V	N-Channel	MOSFET (Metal Oxide)	TO-247-3	155 W	-10 V	25 V	24 A	35 nC	4.5 V	196 mOhm	Through Hole	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3000	$ 4.98

General part information

N-Channel 1200 V 24A (Ta) 155W (Ta) Through Hole TO-247-3

Technical documentation and resources

No documents available