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2N7002H-13 - SOT-23-3

2N7002H-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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2N7002H-13 - SOT-23-3

2N7002H-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N7002H-13
Current - Continuous Drain (Id) @ 25°C170 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.35 nC
Input Capacitance (Ciss) (Max) @ Vds26 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Rds On (Max) @ Id, Vgs7.5 Ohm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.04
20000$ 0.03
30000$ 0.03
50000$ 0.03
70000$ 0.03
100000$ 0.03
250000$ 0.03

Description

General part information

2N7002DWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in motor control and power management functions.