AOI380A60C

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO251A

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO251A

Technical Specifications

Parameters and characteristics for this part

Specification	AOI380A60C

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	955 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-251A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.8 V

Part	Gate Charge (Qg) (Max) @ Vgs [x]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Supplier Device Package
Alpha & Omega Semiconductor Inc. AOI380A60C	20 nC	3.8 V	600 V	Through Hole	MOSFET (Metal Oxide)	955 pF	-55 °C	150 °C	125 W	TO-251-3 Stub Leads IPAK	10 V	380 mOhm	11 A	30 V	N-Channel	TO-251A

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General part information

N-Channel 600 V 11A (Tc) 125W (Tc) Through Hole TO-251A

Technical documentation and resources