VS-31DQ10GTR

Obsolete

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 3.3A C-16

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Obsolete

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 3.3A C-16

Technical Specifications

Parameters and characteristics for this part

Specification	VS-31DQ10GTR

Capacitance @ Vr, F	110 pF
Current - Average Rectified (Io)	3.3 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-201AD, Axial
Speed	200 mA, 500 ns
Supplier Device Package	C-16
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	850 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Speed	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Technology
Vishay General Semiconductor - Diodes Division VS-31DQ10GTR	100 V	100 µA	Through Hole	150 °C	-40 °C	110 pF	200 mA 500 ns	C-16	DO-201AD Axial	850 mV	3.3 A	Schottky
Vishay General Semiconductor - Diodes Division VS-31DQ10TR	100 V	1 mA	Through Hole	150 °C	-40 °C		200 mA 500 ns	C-16	DO-201AD Axial	850 mV	3.3 A	Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 100 V 3.3A Through Hole C-16

Technical documentation and resources