PJD35P03_L2_00001

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Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJD35P03_L2_00001

Current - Continuous Drain (Id) @ 25°C	8.4 A, 35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds	1169 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	35 W, 2 W
Rds On (Max) @ Id, Vgs [Max]	19 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Supplier Device Package	Package / Case	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
Panjit International Inc. PJD35P03_L2_00001	Surface Mount	TO-252AA	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	20 V	11 nC	2 W 35 W	P-Channel	4.5 V 10 V	30 V	8.4 A 35 A	1169 pF	19 mOhm	2.5 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 8.4A (Ta), 35A (Tc) 2W (Ta), 35W (Tc) Surface Mount TO-252AA

Technical documentation and resources