
IXFH80N20Q
ObsoleteIXYS
MOSFET N-CH 200V 80A TO247AD
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet

IXFH80N20Q
ObsoleteIXYS
MOSFET N-CH 200V 80A TO247AD
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IXFH80N20Q |
|---|---|
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 360 W |
| Rds On (Max) @ Id, Vgs | 28 mOhm |
| Supplier Device Package | TO-247AD (IXFH) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 4 V |
IXFH80 Series
| Part | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id [Max] | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs (Max) | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Technology | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | Through Hole | -55 °C | 150 °C | 4 V | N-Channel | 4800 pF | 12.5 mOhm | 20 V | 300 W | 100 V | TO-247-3 | 10 V | 180 nC | TO-247AD (IXFH) | MOSFET (Metal Oxide) | |
IXYS | Through Hole | N-Channel | 20 V | 60 V | TO-247-3 | 10 V | TO-247AD (IXFH) | MOSFET (Metal Oxide) | ||||||||
IXYS | Through Hole | -55 °C | 150 °C | 4 V | N-Channel | 4600 pF | 28 mOhm | 20 V | 200 V | TO-247-3 | 10 V | 180 nC | TO-247AD (IXFH) | MOSFET (Metal Oxide) | 360 W | |
IXYS | Through Hole | -55 °C | 150 °C | 4 V | N-Channel | 4500 pF | 22.5 mOhm | 20 V | 150 V | TO-247-3 | 10 V | 180 nC | TO-247AD (IXFH) | MOSFET (Metal Oxide) | 360 W | |
IXYS | ||||||||||||||||
IXYS | Through Hole | -55 °C | 150 °C | 4 V | N-Channel | 4500 pF | 15 mOhm | 20 V | 100 V | TO-247-3 | 10 V | 180 nC | TO-247AD (IXFH) | MOSFET (Metal Oxide) | 360 W | |
IXYS | Through Hole | -55 °C | 150 °C | 4 V | N-Channel | 4800 pF | 9 mOhm | 20 V | 300 W | 80 V | TO-247-3 | 10 V | 180 nC | TO-247AD (IXFH) | MOSFET (Metal Oxide) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IXFH80 Series
N-Channel 200 V 80A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)
Documents
Technical documentation and resources