SH8M12TB1

NRND

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOP

Search across all available documentation for this part.

NRND

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SH8M12TB1

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	4.5 A, 5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	4 nC
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Vgs(th) (Max) @ Id [Max]	Power - Max [Max]	FET Feature	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Configuration	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature
Rohm Semiconductor SH8M12TB1	2.5 V	2 W	Logic Level Gate	30 V	250 pF	8-SOIC	3.9 mm	0.154 in	8-SOP	42 mOhm	MOSFET (Metal Oxide)	Surface Mount	4.5 A 5 A	N and P-Channel	4 nC	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 5A, 4.5A 2W Surface Mount 8-SOP

Technical documentation and resources

No documents available